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IRFP3703PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRFP3703PBF 데이터시트(HTML) 1 Page - International Rectifier |
1 / 9 page 7/16/04 www.irf.com 1 IRFP3703PbF SMPS MOSFET HEXFET® Power MOSFET l Synchronous Rectification Benefits Applications l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated VDSS RDS(on) max ID 30V 0.0028 Ω 210A Typical SMPS Topologies l Forward and Bridge Converters with Synchronous Rectification for Telecom and Industrial Applications l Offline High Power AC/DC Convertors using Synchronous Rectification Absolute Maximum Ratings Notes through are on page 8 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 100 A IDM Pulsed Drain Current 1000 PD @TC = 25°C Power Dissipation 230 W PD @TA = 25°C Power Dissipation 3.8 Linear Derating Factor 1.5 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 175 °C TO-247AC Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.65 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance l Ultra Low On-Resistance l Active ORing PD - 95481 l Lead-Free |
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