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TC75S55FE 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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TC75S55FE 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 11 page TC75S55F/FU/FE 2007-11-01 1 TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S55F,TC75S55FU,TC75S55FE Single Operational Amplifier The TC75S55F/TC75S55FU/TC75S55FE is a CMOS single- operation amplifier which incorporates a phase compensation circuit. It is designed for use with a low-voltage, low-current power supply; this differentiates this device from conventional general-purpose bipolar op-amps. Features • Low-voltage operation : VDD = ±0.9~3.5 V or 1.8~7 V • Low-current power supply : IDD (VDD = 3 V) = 10 μA (typ.) • Built-in phase-compensated op-amp, obviating the need for any external device • Ultra-compact package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VDD, VSS 7 V Differential input voltage DVIN ±7 V Input voltage VIN VDD~VSS V TC75S55F/FU 200 Power dissipation TC75S55FE PD 100 mW Operating temperature Topr −40~85 °C Storage temperature Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). TC75S55F TC75S55FU TC75S55FE Weight SSOP5-P-0.95 : 0.014 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) SON5-P-0.50 : 0.003 g (typ.) |
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