전자부품 데이터시트 검색엔진 |
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NUF8000MU 데이터시트(PDF) 2 Page - ON Semiconductor |
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NUF8000MU 데이터시트(HTML) 2 Page - ON Semiconductor |
2 / 4 page NUF8000MU http://onsemi.com 2 MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC61000-4-2 Contact Discharge VPP 8.0 kV Operating Temperature Range TOP -40 to 85 °C Storage Temperature Range TSTG -55 to 150 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage VRWM 5.0 V Breakdown Voltage VBR IR = 1.0 mA 6.0 7.0 8.0 V Leakage Current IR VRWM = 3.3 V 100 nA Resistance RA IR = 20 mA 85 100 115 W Capacitance (Notes 1 and 2) Cd 15 20 pF Cut-Off Frequency (Note 3) f3dB Above this frequency, appreciable attenuation occurs 95 MHz 1. Measured at 25 °C, VR = 2.5 V, f = 1.0 MHz. 2. Total Line Capacitance is 2 times the Diode Capacitance (Cd). 3. 50 W source and 50 W load termination. |
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