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AM0912-150 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - STMicroelectronics

๋ถ€ํ’ˆ๋ช… AM0912-150
์ƒ์„ธ๋‚ด์šฉ  AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS
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์ œ์กฐ์‚ฌ  STMICROELECTRONICS [STMicroelectronics]
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AM0912-150 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - STMicroelectronics

   
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September 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 150 W MIN. WITH 7.5 dB GAIN
.
BANDWIDTH
= 255MHz
DESCRIPTION
The AM0912-150 is designed for specialized
avionics applications including Mode-S, TCAS and
JTIDS, where power is provided under pulse for-
mats utilizing short pulse widths and high burst
or overall duty cycles.
The AM0912-150 is housed in the unique BIG-
PAC
โ„ข Hermetic Metal/Ceramic package with in-
ternal Input/Output matching structures.
PIN CONNECTION
BRANDING
0912-150
ORDER CODE
AM0912-150
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25ยฐC)
Symbol
Parameter
Value
Uni t
PDISS
Power Dissipation*
(TC
โ‰ค 100ยฐC)
300
W
IC
Device Current*
16.5
A
VCC
Collector-Supply Voltage*
35
V
TJ
Junction Temperature (Pulsed RF Operation)
250
ยฐC
TSTG
Storage Temperature
โˆ’ 65 to +200
ยฐC
RTH(j-c)
Junction-Case Thermal Resistance*
0.57
ยฐC/W
*Applies only to rated RF amplifier operation
AM0912-150
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/6


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