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AM1011-070 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - STMicroelectronics

๋ถ€ํ’ˆ๋ช… AM1011-070
์ƒ์„ธ๋‚ด์šฉ  RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS
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AM1011-070 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - STMicroelectronics

   
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RF & MICROWAVE TRANSISTORS
September 1992
L-BAND AVIONICS APPLICATIONS
.400 x . 400 2NLFL (S042)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 70 W MIN. WITH 6.7 dB GAIN
DESCRIPTION
The AM1011-070 device is a high power Class
C transistor specifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding severe output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1011-070 is supplied in the AMPAC
โ„ข Her-
metic M etal/Ceramic package with i nternal
Input/Output matching structures.
PIN CONNECTION
BRANDING
1011-70
ORDER CODE
AM1011-70
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25ยฐC)
Symbol
Parameter
Value
Uni t
PDISS
Power Dissipation*
(TC
โ‰ค 100ยฐC)
200
W
IC
Device Current*
8.0
A
VCC
Collector-Supply Voltage*
32
V
TJ
Junction Temperature (Pulsed RF Operation)
250
ยฐC
TSTG
Storage Temperature
โˆ’ 65 to +200
ยฐC
RTH(j-c)
Junction-Case Thermal Resistance*
0.68
ยฐC/W
*Applies only to rated RF amplifier operation
AM1011-070
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4


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