전자부품 데이터시트 검색엔진 |
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BU326A 데이터시트(PDF) 2 Page - STMicroelectronics |
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BU326A 데이터시트(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.33 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 900 V VCE = 900 V Tc = 125 oC 1 2 mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 10 V 10 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage(IB = 0) IC = 100 mA 400 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 2.5 A IB = 0.5 A IC = 4 A IB = 1.25 A 1.5 3 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 2.5 A IB = 0.5 A IC = 4 A IB = 1.25 A 1.4 1.6 V hFE ∗ DC Current Gain IC = 1 A VCE = 5 V 25 ton Turn-on Time IC = 2.5 A IB1 = 0.5 A VCC = 250 V 0.5 µs ts Storage Time IC = 2.5 A IB1 = 0.5 A IB2 = -1A A VCC = 250 V 3.5 µs tf Fall Time IC = 2.5 A IB1 = 0.5 A IB2 = -1A A VCC = 250 V 0.5 µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % BU326A 2/4 |
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