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BYT30P-400 데이터시트(HTML) 2 Page - STMicroelectronics

부품명 BYT30P-400
상세내용  FAST RECOVERY RECTIFIER DIODES
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제조사  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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BYT30P-400 데이터시트(HTML) 2 Page - STMicroelectronics

   
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Synbol
Test Conditions
Min.
Typ.
Max.
Unit
IR
Tj =25
°C
VR =VRRM
35
µA
Tj = 100
°C
6mA
VF
Tj =25
°C
IF = 30A
1.5
V
Tj = 100
°C
1.4
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
trr
Tj =25
°CIF =1A
diF/dt = - 15A/
µsVR = 30V
100
ns
IF = 0.5A
IR =1A
Irr = 0.25A
50
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
tIRM
diF/dt = - 120A/
µs
VCC = 200 V
IF = 30A
Lp
≤ 0.05µHTj = 100°C
See figure 11
75
ns
diF/dt = - 240A/
µs
50
IRM
diF/dt = -120A/
µs
9A
diF/dt = - 240A/
µs
12
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C=
VRP
VCC
Tj = 100
°CVCC = 60V
IF =IF (AV)
diF/dt = - 30A/
µsLp =1µH
See figure 12
3.3
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
To evaluate the conduction losses use the following equations:
VF = 1.1 + 0.0095 IF
P = 1.1 x IF(AV) + 0.0095 IF
2
(RMS)
Figure 1. Low frequency power losses versus
average current
Figure 2. Peak current versus form factor
BYT 30P-400


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