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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BYW51-200 데이터시트(HTML) 4 Page - STMicroelectronics |
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BYW51-200 데이터시트(HTML) 4 Page - STMicroelectronics |
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Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) BYW51/F/G/FP/R-200 4/9 1E-3 1E-2 1E-1 1E+0 0.1 1.0 t(s) K=[Zth(j-c)/Rth(j-c)] δ = 0.5 δ = 0.2 δ = 0.1 Single pulse T δ=tp/T tp Fig. 5-1: Relative variation of thermal impedance junction to case versus pulse duration (D 2PAK, TO-220AB). 1E-2 1E-1 1E+0 1E+1 0.1 1.0 t(s) K=[Zth(j-c)/Rth(j-c)] δ = 0.5 δ = 0.2 δ = 0.1 Single pulse T δ=tp/T tp Fig. 5-2: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AB, TO-220FPAB). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 VFM(V) IFM(A) Tj=125°C Tj=25°C Fig. 6: Forward voltage drop versus forward current (maximum values, per diode). 1 10 100 200 10 20 50 100 VR(V) C(pF) F=1MHz Tj=25°C Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). 1E-3 1E-2 1E-1 1E+0 0 10 20 30 40 50 60 70 80 t(s) IM(A) Tc=25°C Tc=100°C Tc=75°C IM t δ=0.5 Fig. 4-3: Non repetitive surge peak forward current versus overload duration (TO-220FPAB). 10 20 50 100 200 500 10 20 50 100 200 500 dIF/dt(A/µs) Qrr(nC) IF=IF(av) 90% confidence Tj=125°C Fig. 8: Reverse recovery charges versus dIF/dt (per diode). |
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