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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BYW80-200 데이터시트(HTML) 2 Page - STMicroelectronics |
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BYW80-200 데이터시트(HTML) 2 Page - STMicroelectronics |
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Symbol Test Conditions Min. Typ. Max. Unit IR * Tj =25 °CVR =VRRM 10 µA Tj = 100 °C 1mA VF** Tj = 125 °CIF =7 A 0.85 V Tj = 125 °CIF =15 A 1.05 Tj =25 °CIF =15 A 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.027 x IF 2 (RMS) Symbol Test Conditions Min. Typ. Max. Unit trr Tj =25 °CIF = 0.5A IR =1A Irr = 0.25A 25 ns IF =1A VR = 30V dIF/dt = -50A/ µs35 tfr Tj =25 °CIF =1A VFR = 1.1 x VF tr = 10 ns 15 ns VFP Tj =25 °CIF = 1A tr = 10 ns 2 V Symbol Parameter Value Unit Rth (j-c) Junction to case TO-220AC 2.5 °C/W ISOWATT220AC 4.7 THERMAL RESISTANCE ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS RECOVERY CHARACTERISTICS BYW80(F)-200 2/6 |
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