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์ ์๋ถํ ๋ฐ์ดํฐ์ํธ ๊ฒ์์์ง |
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์ ์๋ถํ ๋ฐ์ดํฐ์ํธ ๊ฒ์์์ง |
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BYW80-200 ๋ฐ์ดํฐ์ํธ(HTML) 4 Page - STMicroelectronics |
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BYW80-200 ๋ฐ์ดํฐ์ํธ(HTML) 4 Page - STMicroelectronics |
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0.001 0.01 0.1 1 10 0 10 20 30 40 50 60 70 80 IM(A) Tc=25 C o Tc=50 C o Tc= 95 C o IM t =0.5 t(s) Fig.7 : Non repetitive surge peak forward current versus overload duration. (ISOWATT220AC) 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 10 11 12 o Tamb( C) Rth(j-a)=15 C/W o Rth(j-a)=Rth(j-c) T =tp/T tp =0.5 F(av)(A) I Fig.8 : Average current versus ambient temperature. (duty cycle : 0.5) (TO-220AC) 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 10 11 12 o Tamb( C) Rth(j-a)=15 C/W o Rth(j-a)=Rth(j-c) T =tp/T tp =0.5 F(av)(A) I Fig.9 : Average current versus ambient temperature. (duty cycle : 0.5) (ISOWATT220AC) C(pF) VR(V) Fig.10 : Junction capacitance versus reverse voltage applied (Typical values). 0.001 0.01 0.1 1 0 10 20 30 40 50 60 70 80 90 100 IM(A) Tc=25 C o Tc= 75 C o Tc=120 C o IM t =0.5 t(s) Fig.6 : Non repetitive surge peak forward current versus overload duration. (TO-220AC) QRR(nC) 90% CONFIDENCE Tj=125 C o IF=IF(av) dIF/dt(A/us) Fig.11 : Recovery charges versus dIF/dt. BYW80(F)-200 4/6 |
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