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์ ์๋ถํ ๋ฐ์ดํฐ์ํธ ๊ฒ์์์ง |
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BYW80PI-200 ๋ฐ์ดํฐ์ํธ(HTML) 3 Page - STMicroelectronics |
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BYW80PI-200 ๋ฐ์ดํฐ์ํธ(HTML) 3 Page - STMicroelectronics |
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0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 25 50 75 100 125 150 175 200 P=5W T I M =tp/T tp IM(A) P=10W P=15W Fig.2 : Peak current versus form factor. 0.1 1 10 100 Tj= 125 C o IFM(A) VFM(V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Fig.3 : Forward voltage drop versus forward current (maximum values). 0.1 1.0 0.2 0.5 Zth(j-c) (tp. ) K= Rth(j-c) =0 . 5 =0 . 2 =0 .1 Singl e puls e tp(s) T =tp/T tp 1.0E-03 1.0E-02 1.0E-01 1. 0E+00 K Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 01234 5678 9 10 11 12 13 14 0 2 4 6 8 10 12 14 =0.05 =0.1 =0.2 =0.5 =1 T =tp/ T tp IF(av)(A) PF(av)(W) Fig.1 : Average forward power dissipation versus average forward current. 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 10 11 12 T =tp/T tp =0.5 F(av)(A) I o Tamb( C) Rth(j-a)=15 C/W o Rth(j-a)=Rth(j-c) Fig.6 : Average current versus ambient temperature. (duty cycle : 0.5) 0.001 0.01 0.1 1 0 10 20 30 40 50 60 70 80 90 100 IM t =0.5 t(s) IM(A) Tc=25 C o Tc=110 C o Tc=70 C o Fig.5 : Non repetitive surge peak forward current versus overload duration. BYW80PI-200 3/5 |
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