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์ ์๋ถํ ๋ฐ์ดํฐ์ํธ ๊ฒ์์์ง |
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BYW81P-200 ๋ฐ์ดํฐ์ํธ(HTML) 4 Page - STMicroelectronics |
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BYW81P-200 ๋ฐ์ดํฐ์ํธ(HTML) 4 Page - STMicroelectronics |
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0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 T =tp/T tp =0.5 F(av)(A) I o Tamb( C) Rth(j-a)=15 C/W o Rth(j-a)=Rth(j-c) Fig.7 : Average current versus ambient temperature. (duty cycle : 0.5) (BYW81P) 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 T =tp/T tp =0.5 F(av)(A) I o Tamb( C) Rth(j-a)=15 C/W o Rth(j-a)=Rth(j-c) Fig.8 : Average current versus ambient temperature. (duty cycle : 0.5) (BYW81PI) 1 80 85 10 30 50 7 0 90 95 100 105 110 115 120 VR(V) F=1Mhz Tj=25 C o C(pF) Fig.9 : Junction capacitance versus reverse voltage applied (Typical values). 110 20 40 60 80 0 10 20 30 40 50 60 QRR(nC) 90%CONFIDENCE Tj=100 C Tj=25 C O O IF=IF(av) dIF/dt(A/us) Fig.10 : Recovery charges versus dIF/dt. Tj( C) QRR ;IRM[Tj]/QRR ;IRM[Tj=125 C] 0 255075 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 IRM QRR o o Fig.12 : Dynamic parameters versus junction temperature. 110 0. 0 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 IRM(A) dIF/dt(A/us) 20 40 60 80 90%CONFIDENCE Tj=100 C O Tj=25 C O IF=IF(av) Fig.11 : Peak reverse current versus dIF/dt. BYW81P-200 / BYW81PI-200 4/6 |
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