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BTA201 데이터시트(PDF) 8 Page - NXP Semiconductors |
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BTA201 데이터시트(HTML) 8 Page - NXP Semiconductors |
8 / 12 page BTA201_SER_B_E_ER_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 4 February 2008 8 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation Vo = 1.02 V; Rs = 0.358 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj =25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature Gate open circuit (1) BTA201 series B (2) BTA201 series E and ER Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values VT (V) 0 0.4 0.8 1.2 1.6 2 0 0.4 0.8 1.2 1.6 2 (A) IT (1) (2) (3) 003aaa960 Tj (°C) −50 150 100 050 001aab100 1 2 3 0 IL IL(25°C) Tj (°C) −50 150 100 050 001aab099 1 2 3 0 IH IH(25°C) 0 50 100 150 10 102 103 104 dVD/dt Tj °C (V/ µs) (1) (2) 003aab834 |
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