전자부품 데이터시트 검색엔진 |
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S-80144BLPF-JE5TFG 데이터시트(PDF) 12 Page - Seiko Instruments Inc |
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S-80144BLPF-JE5TFG 데이터시트(HTML) 12 Page - Seiko Instruments Inc |
12 / 33 page ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL DELAY TIME SETTING) S-801 Series Rev.3.3_00 12 Seiko Instruments Inc. Electrical Characteristics Table 6 (Ta =25 °C Unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test circuit Detection voltage *1 −V DET — −V DET(S) ×0.98 −V DET(S) −VDET(S) ×1.02 V 1 Hysteresis width VHYS — 30 60 100 mV ISS VDD=3.5 V S-80122 to 26 — 1.3 3.3 μA Current consumption VDD=4.5 V S-80127 to 39 — 1.5 3.5 VDD=6.5 V S-80140 to 60 — 1.8 4.0 Operating voltage VDD — 0.95 — 10.0 V Output current IOUT Output transistor, Nch, VOUT=0.5 V VDD=1.2 V S-80122 to 60 0.75 1.5 — mA 2 VDD=2.4 V S-80127 to 60 3.0 6.0 — VDD=4.8 V S-80122 to 39 1.0 2.0 — Only for CMOS output products, Output transistor, Pch, VDD–VOUT=0.5 V VDD=6.0 V S-80140 to 54 1.25 2.5 — VDD=8.4 V S-80155 to 60 1.5 3.0 — Leakage current ILEAK Only for Nch open-drain output products, Output transistor, Nch, VDD=10.0 V, VOUT=10.0 V — — 0.1 μA Detection voltage temperature coefficient *2 DET DET V Ta V − • Δ − Δ Ta =−40 °C to +85 °C — ±120 ±360 ppm/ °C 1 Delay time 1 tD1 VDD=−VDET+1 V, DS pin Low S-801xxAx 32.5 50 72.5 ms S-801xxBx 65 100 145 S-801xxCx 130 200 290 Delay time 2 tD2 VDD=−VDET+1 V, DS pin High 110 220 330 μs 3 Input voltage VSH DS pin, VDD=6.0 V 1.0 — — V 4 VSL DS pin, VDD=6.0 V — — 0.3 *1. −V DET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 1 to 2.) *2. Temperature change ratio for the detection voltage [mV/ °C] is calculated using the following equation. [] () [] [] 1000 C ppm/ V Ta Δ V Δ V Typ. V C mV/ Ta Δ V Δ DET DET DET(S) DET ÷ ° − − × − = ° − • 3 * 2 * *1 *1. Temperature change ratio of the detection voltage *2. Specified detection voltage value *3. Detection voltage temperature coefficient |
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