전자부품 데이터시트 검색엔진 |
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HCF4502B 데이터시트(PDF) 4 Page - STMicroelectronics |
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HCF4502B 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 11 page DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25 °C, CL = 50 pF, RL = 200 kΩ typical temperature coefficient for all VDD values is 0.3 %/°C, all input rise and fall times = 20 ns) Test Conditions Val ue Symbol Parameter V DD (V) Min. Typ. Max. Unit t PHL Data or Inhibit Delay Time 5 135 270 ns 10 60 120 15 40 80 t PL H Data or Inhibit Delay Time 5 190 380 ns 10 90 180 15 65 30 t PHZ Disable Delay Time (output high to high impedance) 560 120 ns 10 40 80 15 30 60 t PZH Disable Delay Time (high impedance to output high) 5110 220 ns 10 50 100 15 40 80 t PL Z Disable Delay Time (output low to high impedance) 5125 250 ns 10 65 130 15 55 110 t PZ L Disable Delay Time (high impedance to output low) 5125 250 ns 10 55 110 15 40 80 t TLH Tansition Time 5 100 200 ns 10 50 100 15 40 80 t THL Transition Time 5 60 120 ns 10 30 60 15 20 40 Typical Output Low (sink) Current. Minimum Output High (source) Current Charac- teristics. HCC/HCF4502B 4/11 |
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유사한 설명 - HCF4502B |
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