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IRFP250 데이터시트(PDF) 3 Page - STMicroelectronics |
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IRFP250 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 8 page 3/8 IRFP250 Safe Operating Area Thermal Impedance ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 100V, ID =16 A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 25 ns tr Rise Time 50 ns Qg Total Gate Charge VDD = 160V, ID = 33 A, VGS = 10V, RG =4.7Ω 117 158 nC Qgs Gate-Source Charge 15 nC Qgd Gate-Drain Charge 50 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 160V, ID = 16 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 60 ns tf Fall Time 40 ns tc Cross-over Time 100 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 33 A ISDM (2) Source-drain Current (pulsed) 132 A VSD (1) Forward On Voltage ISD = 33 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 33 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 370 ns Qrr Reverse Recovery Charge 5.4 µC IRRM Reverse Recovery Current 29 A |
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