전자부품 데이터시트 검색엔진 |
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IRFP460 데이터시트(PDF) 3 Page - STMicroelectronics |
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IRFP460 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 8 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. T yp. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 250 V ID =10 A RG =4.7 Ω VGS =10 V (see test circuit, figure 1) 32 15 ns ns Qg Q gs Qgd Tot al Gate Charge Gat e-Source Charge Gat e-Drain Charge VDD = 400 V ID =20 A VGS =10 V 100 21 37 130 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. T yp. Max. Unit tr(Voff) tf tc Off -volt age Rise Time Fall Time Cross-over Time VDD = 400 V ID =20 A RG =4.7 Ω VGS =10 V (see test circuit, figure 5) 20 25 47 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. T yp. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 20 80 A A VSD ( ∗) Forward On Volt age ISD =20 A VGS =0 1. 6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A di/dt = 100 A/ µs VDD = 100 V Tj =150 oC (see test circuit, figure 3) 700 9 25 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance IRFP460 3/8 |
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