전자부품 데이터시트 검색엔진 |
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1N4148 데이터시트(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1N4148 데이터시트(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page FEATURES Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation These diodes are also available in glass case DO-34. Mini-MELF Weight: 0.004 ounces, 0.13 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. MAXIMUM RATINGS UNITS Reverse voltage VR V Peak reverse voltage VRM V Average forw ard rectified current half w ave rectification w ith resist.load @TA=25 and f 50Hz Forw ard surge current @ t<1s and T J=25 IFSM mA Pow er dissipation @ T A=25 Ptot mW Junction temperature TJ Storage temperature range TSTG ELECTRICAL CHARACTERISTICS UNITS Forw ard voltage at I F=10mA VF V Leakage current @ V R=20V IR nA @ V R=75V IR μA @ V R=20V T J=150 IR μA Capacitance @ V F=VR=0V CJ pF Voltage rise w hen sw itching on tested w ith 50mA pulses tp=0.1μs. Rise time<30ns. fp=5 to 100KHz Reverse recovery time from I F=10mA to IR=1mA V R=6V . RL=100Ω. Thermal resistance junction to ambient RθJA K/W Rectification efficiency at 100MHz,V RF=2V ηv - 1N4148 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. - 25.0 5.0 50.0 V ns 1N4148 MECHANICAL DATA SMALL SIGNAL SWITCHING DIODE Case: DO-35, glass case REVERSE VOLTAGE : 75 V CURRENT: 0.15 A Polarity: Color band denotes cathode IAV 500.0 5001) mA - - 1.0 - 75.0 100.0 150.0 175 -55 --- +175 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. MIN TYP MAX - - 4 0.45 - - 3501) 4 Vfr - - 2.5 trr - - - - - - Document Number 0268001 1. DO-35(GLASS) BL GALAXYELECTRICAL www.galaxycn.com BLGALAXYELECTRICAL |
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