FEATURES

Silicon epitaxial planar diode

High speed switching diode

500 mW power dissipation

These diodes are also available in glass case

DO-34. Mini-MELF

Weight: 0.004 ounces, 0.13 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

MAXIMUM RATINGS

UNITS

Reverse voltage

V

Peak reverse voltage

V

Average forw ard rectified current

half w ave rectification w ith resist.load

and f

50Hz

Forw ard surge current @ t<1s and T

mA

Pow er dissipation

@ T

mW

Junction temperature

Storage temperature range

ELECTRICAL CHARACTERISTICS

UNITS

Forw ard voltage at I

V

Leakage current

@ V

nA

@ V

μA

@ V

T

μA

Capacitance

@ V

pF

Voltage rise w hen sw itching

on

tested w ith 50mA pulses

tp=0.1μs. Rise time<30ns. fp=5 to 100KHz

Reverse recovery time

from I

V

Thermal resistance junction to ambient

K/W

Rectification efficiency at 100MHz,V

ηv

-

1N4148

1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.

-

25.0

5.0

50.0

V

ns

1N4148

MECHANICAL DATA

SMALL SIGNAL SWITCHING DIODE

Case: DO-35, glass case

REVERSE VOLTAGE : 75 V

CURRENT:

0.15 A

Polarity: Color band denotes cathode

500.0

mA

-

-

1.0

-

75.0

100.0

150.0

175

-55 --- +175

1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.

MIN

TYP

MAX

-

-

4

0.45

-

-

4

-

-

2.5

-

-

-

-

-

-

Document Number 0268001

1.

DO-35(GLASS)

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