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L6235PD 데이터시트(PDF) 8 Page - STMicroelectronics

부품명 L6235PD
상세설명  DMOS DRIVER FOR THREE-PHASE BRUSHLESS DC MOTOR
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6235PD 데이터시트(HTML) 8 Page - STMicroelectronics

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L6235
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CIRCUIT DESCRIPTION
POWER STAGES and CHARGE PUMP
The L6235 integrates a Three-Phase Bridge, which
consists of 6 Power MOSFETs connected as shown
on the Block Diagram. Each Power MOS has an
RDS(ON) = 0.3Ω (typical value @25°C) with intrinsic
fast freewheeling diode. Switching patterns are gen-
erated by the PWM Current Controller and the Hall
Effect Sensor Decoding Logic (see relative para-
graphs). Cross conduction protection is implemented
by using a dead time (tDT = 1µs typical value) set by
internal timing circuit between the turn off and turn on
of two Power MOSFETs in one leg of a bridge.
Pins VSA and VSB MUST be connected together to
the supply voltage (VS).
Using N-Channel Power MOS for the upper transis-
tors in the bridge requires a gate drive voltage above
the power supply voltage. The Bootstrapped Supply
(VBOOT) is obtained through an internal oscillator and
few external components to realize a charge pump
circuit as shown in Figure 3. The oscillator output (pin
VCP) is a square wave at 600KHz (typically) with 10V
amplitude. Recommended values/part numbers for
the charge pump circuit are shown in Table1.
Table 1. Charge Pump External Component
Values.
Figure 3. Charge Pump Circuit
LOGIC INPUTS
Pins FWD/REV, BRAKE, EN, H1, H2 and H3 are TTL/
CMOS and µC compatible logic inputs. The internal
structure is shown in Figure 4. Typical value for turn-
ON and turn-OFF thresholds are respectively Vth(ON)
= 1.8V and Vth(OFF) = 1.3V.
Pin EN (enable) may be used to implement Overcurrent
and Thermal protection by connecting it to the open col-
lector DIAG output If the protection and an external dis-
able function are both desired, the appropriate
connection must be implemented. When the external
signal is from an open collector output, the circuit in Fig-
ure 5 can be used . For external circuits that are push
pull outputs the circuit in Figure 6 could be used. The re-
sistor REN should be chosen in the range from 2.2KΩ to
180K
Ω. Recommended values for REN and CEN are re-
spectively 100K
Ω and 5.6nF. More information for se-
lecting the values can be found in the Overcurrent
Protection section.
Figure 4. Logic Input Internal Structure
Figure 5. Pin EN Open Collector Driving
Figure 6. Pin EN Push-Pull Driving
CBOOT
220nF
CP
10nF
RP
100
D1
1N4148
D2
1N4148
D2
CBOOT
D1
RP
CP
VS
VSA
VCP
VBOOT
VSB
D01IN1328
5V
D01IN1329
ESD
PROTECTION
5V
5V
OPEN
COLLECTOR
OUTPUT
REN
CEN
EN
DIAG
D02IN1378
ESD
PROTECTION
5V
PUSH-PULL
OUTPUT
REN
CEN
EN
D02IN1379
DIAG
ESD
PROTECTION


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