전자부품 데이터시트 검색엔진 |
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AD811AR-16-REEL7 데이터시트(PDF) 4 Page - Analog Devices |
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AD811AR-16-REEL7 데이터시트(HTML) 4 Page - Analog Devices |
4 / 20 page AD811 Rev. E | Page 4 of 20 SPECIFICATIONS @ TA = +25°C, VS = ±15 V dc, RLOAD = 150 Ω, unless otherwise noted. Table 1. AD811J/A1 AD811S2 Parameter Conditions VS Min Typ Max Min Typ Max Unit DYNAMIC PERFORMANCE Small Signal Bandwidth (No Peaking) −3 dB G = +1 RFB = 562 Ω ±15 V 140 140 MHz G = +2 RFB = 649 Ω ±15 V 120 120 MHz G = +2 RFB = 562 Ω ±15 V 80 80 MHz G = +10 RFB = 511 Ω ±15 V 100 100 MHz 0.1 dB Flat G = +2 RFB = 562 Ω ±15 25 25 MHz RFB = 649 Ω ±15 35 35 MHz Full Power Bandwidth3 VOUT = 20 V p-p ±15 40 40 MHz Slew Rate VOUT = 4 V p-p ±15 400 400 V/µs VOUT = 20 V p-p ±15 2500 2500 V/µs Settling Time to 0.1% 10 V Step, AV = − 1 ±15 50 50 ns Settling Time to 0.01% 10 V Step, AV = − 1 ±15 65 65 ns Settling Time to 0.1% 2 V Step, AV = − 1 ±15 25 25 ns Rise Time, Fall Time RFB = 649, AV = +2 ±15 3.5 3.5 ns Differential Gain f = 3.58 MHz ±15 0.01 0.01 % Differential Phase f = 3.58 MHz ±15 0.01 0.01 Degree THD @ fC = 10 MHz VOUT = 2 V p-p, AV = +2 ±15 −74 −74 dBc Third-Order Intercept4 @ fC = 10 MHz ±15 36 36 dBm ±15 43 43 dBm INPUT OFFSET VOLTAGE ±5 V, ±15 V 0.5 3 0.5 3 mV TMIN to TMAX 5 5 mV Offset Voltage Drift 5 5 µV/°C INPUT BIAS CURRENT −Input ±5 V, ±15 V 2 5 2 5 µA TMIN to TMAX 15 30 µA +Input ±5 V, ±1 5 V 2 10 2 10 µA TMIN to TMAX 20 25 µA TRANSRESISTANCE TMIN to TMAX VOUT = ±10 V RL = ∞ ±15 V 0.75 1.5 0.75 1.5 MΩ RL = 200 Ω ±15 V 0.5 0.75 0.5 0.75 MΩ VOUT = ±2.5 V RL = 150 Ω ±5 V 0.25 0.4 0.125 0.4 MΩ 1 The AD811JR is specified with ±5 V power supplies only, with operation up to ±12 V. 2 See the Analog Devices military data sheet for 883B tested specifications. 3 FPBW = slew rate/(2 π VPEAK). 4 Output power level, tested at a closed-loop gain of two. |
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