DS90C031B_01 datasheet(2/11 Pages) NSC

부품명	DS90C031B

상세설명	LVDS Quad CMOS Differential Line Driver

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제조업체	NSC [National Semiconductor (TI)]

홈페이지	http://www.national.com

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage (V

CC)

−0.3V to +6V

Input Voltage (D

IN)

−0.3V to (V

CC + 0.3V)

Enable Input Voltage (EN, EN*)

−0.3V to (V

CC + 0.3V)

Output Voltage (D

OUT+,DOUT−)

−0.3V to +5.8V

Short Circuit Duration

(D

OUT+,DOUT−)

Continuous

Maximum Package Power Dissipation @ +25˚C

M Package

1068 mW

Derate M Package

8.5 mW/˚C above +25˚C

Storage Temperature Range

−65˚C to +150˚C

Lead Temperature Range

Soldering (4 sec.)

+260˚C

Maximum Junction Temperature

+150˚C

ESD Rating (Note 7)

(HBM, 1.5 k

Ω, 100 pF)

≥ 2kV

(EIAJ, 0

Ω, 200 pF)

≥ 250V

Recommended Operating

Conditions

Min

Typ

Max

Units

Supply Voltage (V

CC)

+4.5

+5.0

+5.5

V

Operating Free Air Temperature (T

A)

DS90C031BT

−40

+25

+85

˚C

Electrical Characteristics

Over supply voltage and operating temperature ranges, unless otherwise specified. (Notes 2, 3)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

V

OD1

Differential Output Voltage

R

L = 100Ω (Figure 1)DOUT−,

D

OUT+

250

345

450

mV

∆V

OD1

Change in Magnitude of

V

OD1 for Complementary

Output States

4

35

|mV|

V

OS

Offset Voltage

1.10

1.25

1.35

V

∆V

OS

Change in Magnitude of V

OS

for Complementary Output

States

5

25

|mV|

V

OH

Output Voltage High

R

L = 100Ω

1.41

1.60

V

OL

Output Voltage Low

0.90

1.07

V

IH

Input Voltage High

D

IN,

EN,

EN*

2.0

V

CC

V

IL

Input Voltage Low

GND

0.8

V

I

Input Current

V

IN =VCC, GND, 2.5V or 0.4V

−10

±1

+10

µA

V

CL

Input Clamp Voltage

I

CL = −18 mA

−1.5

−0.8

V

I

OS

Output Short Circuit Current

V

OUT = 0V (Note 8)

D

OUT−,

D

OUT+

−3.5

−5.0

mA

I

OZ

Output TRI-STATE Current

EN = 0.8V and EN* = 2.0V,

V

OUT =0VorVCC

−10

±1

+10

µA

I

OFF

Power - Off Leakage

V

O = 0V or 2.4V, VCC = 0V or Open

−10

±1

+10

µA

I

CC

No Load Supply Current

Drivers Enabled

D

IN =VCC or GND

V

CC

1.7

3.0

mA

D

IN = 2.5V or 0.4V

4.0

6.5

mA

I

CCL

Loaded Supply Current

Drivers Enabled

R

L = 100Ω (all channels)

V

IN =VCC or GND (all inputs)

15.4

21.0

mA

I

CCZ

No Load Supply Current

Drivers Disabled

D

IN =VCC or GND

EN = GND, EN* = V

CC

2.2

4.0

mA

Switching Characteristics

V

CC = +5.0V, TA = +25˚C (Notes 3, 6, 9)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

t

PHLD

Differential Propagation Delay High to Low

R

L = 100Ω,CL =5pF

(

Figure 2 and Figure 3)

1.0

2.0

3.0

ns

t

PLHD

Differential Propagation Delay Low to High

1.0

2.1

3.0

ns

t

SKD

Differential Skew |t

PHLD –tPLHD|

0

80

400

ps

t

SK1

Channel-to-Channel Skew (Note 4)

0

300

600

ps

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DS90C031B 데이터시트(PDF) 2 Page - National Semiconductor (TI)

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유사한 부품 번호 - DS90C031B_01

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