전자부품 데이터시트 검색엔진 |
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BC818 데이터시트(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BC818 데이터시트(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page BL Galaxy Electrical Production specification NPN General Purpose Amplifier BC818 Document number: BL/SSSTC102 www.galaxycn.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA IB=0 B 25 V Emitter-base breakdown voltage V(BR)EBO IE=10μA IC=0 5 V Collector cut-off current ICBO VCB=25V IE=0 0.1 μ A Emitter cut-off current IEBO VEB=4V IC=0 0.1 μ A DC current gain 818-16 818-25 818-40 hFE VCE=1V IC=100mA 100 160 250 250 400 630 Collector-emitter saturation voltage VCE(sat) IC=500mA IB=50mA B 0.7 V Base-emitter saturation voltage VBE(sat) IC=500mA IB=50mA B 1.2 V Transition frequency fT VCE=5V IC=50mA f=100MHz 170 MHz |
유사한 부품 번호 - BC818 |
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유사한 설명 - BC818 |
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