전자부품 데이터시트 검색엔진 |
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BCW60 데이터시트(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BCW60 데이터시트(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page BL Galaxy Electrical Production specification NPN General Purpose Amplifier BCW60 Document number: BL/SSSTC104 www.galaxycn.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0 32 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA IB=0 B 32 V Emitter-base breakdown voltage V(BR)EBO IE=1μA IC=0 5 V Collector cut-off current ICBO VCB=32V IE=0 20 nA Emitter cut-off current IEBO VEB=4V IC=0 20 nA DC current gain BCW60B BCW60C BCW60D hFE VCE=5V IC=2mA 180 250 380 310 460 630 Collector-emitter saturation voltage VCE(sat) IC=10mA IB=0.25mA B IC=50mA IB=1.25mA B 0.35 0.55 V Base-emitter saturation voltage VBE(sat) IC=10mA IB=0.25mA B IC=50mA IB=1.25mA B 0.85 1.05 V Transition frequency fT VCE=5V IC=10mA f=100MHz 100 250 MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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