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SD107WS 데이터시트(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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SD107WS 데이터시트(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode SD107WS Document number: BL/SSSKB027 www.galaxycn.com Rev.A 1 FEATURES Low forward voltage drop. Guard ring die construction for transient protection. Pb Lead-free Ideal for low logic level applications. Low capacitance. APPLICATIONS Schottky barrier switching SOD-323 ORDERING INFORMATION Type No. Marking Package Code SD107WS SG SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak Repetitive reverse voltage VRRM 30 V RMS Reverse Voltage VR(RMS) 21 V Forward continuous Current IF 100 mA Non-Repetitive Peak Forward Surge Current @tp≤10ms IFSM 750 mA Power dissipation Pd 250 mW Thermal resistance junction to ambient air RθjA 500 ℃ /W Junction temperature Tj 150 ℃ Storage temperature TSTG -65~+150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Reverse breakdown voltage VR 30 V IR=100μA 300 IF=2mA 360 IF=15mA 470 550 IF=50mA Forward voltage VF 580 800 mV IF=100mA Reverse current IR 1.0 μA VR=25V Capacitance between terminals CT 7 pF VR=10V,f=1MHz |
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