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STP6NK60ZFP 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STP6NK60ZFP
상세설명  N-channel 600 V - 1 廓 - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET
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Electrical characteristics
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 3 A
RG =4.7 Ω VGS = 10 V
(see Figure 17)
14
14
47
19
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
6
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
24
A
VSD
(2)
2.
Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 6 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150 °C
(see Figure 19)
445
2.7
12
ns
µC
A
Table 9.
Gate-source zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown
voltage
Eggs± 1 mA (open drain)
30
V


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