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IRFP3306PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP3306PBF
상세설명  HEXFET Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

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IRFP3306PbF
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Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.04mH
RG = 25Ω, IAS = 96A, VGS =10V. Part not recommended for use
above this value .
S
D
G
„ ISD ≤ 75A, di/dt ≤ 1400A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
… Pulse width ≤ 400μs; duty cycle ≤ 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.07
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.3
4.2
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
0.7
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
230
–––
–––
S
Qg
Total Gate Charge
–––
85
120
nC
Qgs
Gate-to-Source Charge
–––
20
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
26
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
59
–––
td(on)
Turn-On Delay Time
–––
15
–––
ns
tr
Rise Time
–––
76
–––
td(off)
Turn-Off Delay Time
–––
40
–––
tf
Fall Time
–––
77
–––
Ciss
Input Capacitance
–––
4520
–––
pF
Coss
Output Capacitance
–––
500
–––
Crss
Reverse Transfer Capacitance
–––
250
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
720
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)h –––
880
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 160c
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
620
A
(Body Diode)
d
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
31
ns
TJ = 25°C
VR = 51V,
–––
35
TJ = 125°C
IF = 75A
Qrr
Reverse Recovery Charge
–––
34
nC TJ = 25°C
di/dt = 100A/μs
g
–––
45
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.9
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VDS = 50V, ID = 75A
ID = 75A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS =30V
Conditions
VGS = 10V
g
VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 48V
i, See Fig. 11
VGS = 0V, VDS = 0V to 48V
h
TJ = 25°C, IS = 75A, VGS = 0V
g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
d
VGS = 10V, ID = 75A
g
VDS = VGS, ID = 150μA
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
ID = 75A
RG = 2.7Ω
VGS = 10V
g
VDD = 30V
ID = 75A, VDS =0V, VGS = 10V


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