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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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M27W801-120F6TR 데이터시트(PDF) 1 Page - STMicroelectronics |
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M27W801-120F6TR 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 16 page  1/16 April 2000 M27W801 8 Mbit (1Mb x8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION s ACCESS TIME: –80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V s PIN COMPATIBLE with M27C801 s LOW POWER CONSUMPTION: –15 µA max Standby Current – 15mA max Active Current at 5MHz s PROGRAMMING TIME 50 µs/byte s HIGH RELIABILITY CMOS TECHNOLOGY – 2,000V ESD Protection – 200mA Latchup Protection Immunity s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 42h DESCRIPTION The M27W801 is a low voltage 8 Mbit EPROM of- fered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage and is organized as 1,048,576 by 8 bits. The M27W801 operates in the read mode with a supply voltage as low as 2.7V at –40 to 85 °C tem- perature range. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery re- charges. The FDIP32W (window ceramic frit-seal package) has a transparent lids which allow the user to ex- pose the chip to ultraviolet light to erase the bit pat- tern. A new pattern can then be written to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27W801 is offered in PDIP32, PLCC32 and TSOP32 (8 x 20 mm) packages. Figure 1. Logic Diagram AI02363 20 A0-A19 Q0-Q7 VCC M27W801 VSS 8 GVPP E 1 32 FDIP32W (F) PLCC32 (K) TSOP32 (N) 8 x 20 mm 32 1 PDIP32 (B) |
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