STD4NK60Z datasheet(3/20 Pages) STMICROELECTRONICS

부품명	STD4NK60Z

상세설명	N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP

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STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP

Electrical ratings

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1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 - D²PAK

DPAK-IPAK-I²PAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

600

V

VGS

Gate- source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

4

(1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC = 100 °C

2.5

2.5 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

16

16 (1)

A

PTOT

Total dissipation at TC = 25 °C

70

25

W

Derating factor

0.56

0.2

W/°C

VESD(G-S) Gate source ESD(HBM-C=100 pF, R=1.5 kΩ)

3000

V

dv/dt (3)

3.

ISD ≤ 4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX.

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s; TC = 25 °C)

-

2500

V

Tstg

Storage temperature

-55 to 150

°C

Tj

Max operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

D²PAK

I²PAK

DPAK

IPAK

TO-220FP

Rthj-case

Thermal resistance junction-case max

1.78

5

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

100

62.5

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

4A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAR, VDD= 50 V)

120

mJ

유사한 부품 번호 - STD4NK60Z

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STD4NK60Z	759Kb / 16P	N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET
	STD4NK60Z	970Kb / 28P	N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP
	STD4NK60Z-1	759Kb / 16P	N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET
	STD4NK60Z-1	970Kb / 28P	N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP
	STD4NK60Z-1	731Kb / 32P	N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages Rev 9 - April 2018

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유사한 설명 - STD4NK60Z

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STMicroelectronics	STD4NK60ZT4	970Kb / 28P	N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP
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	STX6NM60N	698Kb / 19P	N-channel 600 V, 0.85 ?? 4.6 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK January 2009 Rev 3
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