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M29W010B 데이터시트(PDF) 3 Page - STMicroelectronics |
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M29W010B 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 19 page 3/19 M29W010B SIGNAL DESCRIPTIONS See Figure 1, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect- ed to this device. Address Inputs (A0-A16). The Address Inputs select the cells in the memory array to access dur- ing Bus Read operations. During Bus Write opera- tions they control the commands sent to the Command Interface of the internal state machine. Data Inputs/Outputs (DQ0-DQ7). The Data In- puts/Outputs output the data stored at the selected address during a Bus Read operation. During Bus Write operations they represent the commands sent to the Command Interface of the internal state machine. Chip Enable (E). The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write op- erations to be performed. When Chip Enable is High, VIH, all other pins are ignored. Output Enable (G). The Output Enable, G, con- trols the Bus Read operation of the memory. Write Enable (W). The Write Enable, W, controls the Bus Write operation of the memory’s Com- mand Interface. VCC Supply Voltage. The VCC Supply Voltage supplies the power for all operations (Read, Pro- gram, Erase etc.). The Command Interface is disabled when the VCC Supply Voltage is less than the Lockout Voltage, VLKO. This prevents Bus Write operations from ac- cidentally damaging the data during power-up, power-down and power surges. If the Program/ Erase Controller is programming or erasing during this time then the operation aborts and the memo- ry contents being altered will be invalid. A 0.1µF capacitor should be connected between the VCC Supply Voltage pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during program and erase operations, ICC3. VSS Ground. The VSS Ground is the reference for all voltage measurements. Table 2. Absolute Maximum Ratings (1) Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi- tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual- ity documents. 2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions. Symbol Parameter Value Unit TA Ambient Operating Temperature (Temperature Range Option 1) 0 to 70 °C Ambient Operating Temperature (Temperature Range Option 3) –40 to 125 °C Ambient Operating Temperature (Temperature Range Option 6) –40 to 85 °C TBIAS Temperature Under Bias –50 to 125 °C TSTG Storage Temperature –65 to 150 °C VIO (2) Input or Output Voltage –0.6 to 4 V VCC Supply Voltage –0.6 to 4 V VID Identification Voltage –0.6 to 13.5 V Table 3. Uniform Block Addresses, M29W010B # Size (Kbytes) Address Range 7 16 1C000h-1FFFFh 6 16 18000h-1BFFFh 5 16 14000h-17FFFh 4 16 10000h-13FFFh 3 16 0C000h-0FFFFh 2 16 08000h-0BFFFh 1 16 04000h-07FFFh 0 16 00000h-03FFFh |
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