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STU10NM65N 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STU10NM65N
상세설명  N-channel 650 V - 0.43 廓 - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh??Power MOSFET
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Electrical characteristics
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
4/17
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
650
V
dv/dt (1)
1.
Characteristics value at turn off on inductive load
Drain source voltage slope
VDD= 520 V, ID= 9 A,
VGS= 10 V
25
V/ns
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating, @125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 4.5 A
0.43
0.48
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance
VDS=15 V, ID = 4.5 A
7.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
850
53
4
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 520 V
90
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 9 A,
VGS = 10 V,
(see Figure 19)
25
14
4
nC
nC
nC


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