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TLHE4900 데이터시트(PDF) 2 Page - Vishay Siliconix |
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TLHE4900 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 83023 Rev. 1.5, 30-Aug-04 VISHAY TLHE4900 Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Yellow TLHE4900 1) in one Packing Unit I Vmin/IVmax ≤ 0.5 Typical Characteristics (Tamb = 25 °C unless otherwise specified) Parameter Test condition Symbol Min Typ. Max Unit Luminous intensity 1) IF = 10 mA IV 66 300 mcd Dominant wavelength IF = 10 mA λd 581 588 594 nm Peak wavelength IF = 10 mA λp 590 nm Angle of half intensity IF = 10 mA ϕ ± 16 deg Forward voltage IF = 20 mA VF 1.9 2.6 V Reverse voltage IR = 10 µAVR 5V Junction capacitance VR = 0, f = 1 MHz Cj 15 pF Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature for InGaN 0 25 50 75 100 125 95 10887 Tamb - Ambient Temperature ( °C) 100 80 60 40 20 0 0 10 20 30 40 60 95 10894 50 Tamb - Ambient Temperature ( °C) 100 80 60 40 20 0 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Figure 4. Forward Current vs. Forward Voltage 0.4 0.2 0 0.2 0.4 0.6 95 10044 0.6 0.9 0.8 0°°° 30° 10 20 40° 50° 60° 70° 80° 0.7 1.0 1 10 100 1.0 1.5 2.0 2.5 3.0 VF - Forward Voltage(V) 95 10878 |
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