The information in this document is subject to change without notice.

N-CHANNEL GaAs MESFET

NEZ1011-4E, NEZ1414-4E

4W X, Ku-BAND POWER GaAs MESFET

1998

©

Document No. P13729EJ1V0DS00 (1st edition)

Date Published September 1998 N CP(K)

Printed in Japan

DATA SHEET

DESCRIPTION

The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high

output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

only a 50

Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The

device incorporates a WSi (tungsten silicide) gate structure for high reliability.

FEATURES

•

•

High Linear Gain

: 8.0 dB typ. (NEZ1011-4E), 7.0 dB typ. (NEZ1414-4E)

•

High Efficiency

: 30 % typ.

•

Input and Output Internally Matched for Optimum performance

ORDERING INFORMATION

Part Number

Package

NEZ1011-4E

NEZ1414-4E

T-78

Remark To order evaluation samples, please contact your local NEC sales office.

(Part number for sample order: NEZ1011-4E, NEZ1414-4E)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

15

V

Gate to Source Voltage

–7

V

Drain Current

4.5 (NEZ1011-4E)

5.0 (NEZ1414-4E)

A

Gate Forward Current

+40

mA

Gate Reverse Current

–40

mA

Total Power Dissipation

30

W

Channel Temperature

175

°C

Storage Temperature

–65 to +175

°C

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.