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4 / 17 page Electrical characteristics STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N 4/17 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 600 V dv/dt(1) 1. Characteristics value at turn off on inductive load Drain-source voltage slope VDD = 480 V, ID = 7 A, VGS =10 V 38 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc = 125 °C 1 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 23 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 3.5 A 0.56 0.65 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS = 15 V, ID= 3.5 A 15 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 560 37 2 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 480 V 153 pF RG Gate input resistance f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain 6 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 7 A VGS = 10 V (see Figure 19) 19 3 10 nC nC nC |
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