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STP8NM60N 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STP8NM60N
상세설명  N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET
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Electrical characteristics
STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N
4/17
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0
600
V
dv/dt(1)
1.
Characteristics value at turn off on inductive load
Drain-source voltage slope
VDD = 480 V, ID = 7 A,
VGS =10 V
38
V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc = 125 °C
1
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 3.5 A
0.56
0.65
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min. Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
VDS = 15 V, ID= 3.5 A
15
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
560
37
2
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
153
pF
RG
Gate input resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
6
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 7 A
VGS = 10 V
(see Figure 19)
19
3
10
nC
nC
nC


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