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BTA41 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 3 Page - Sirectifier Semiconductors

๋ถ€ํ’ˆ๋ช… BTA41
์ƒ์„ธ๋‚ด์šฉ  Discrete Triacs(Non-Isolated/Isolated)
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์ œ์กฐ์‚ฌ  SIRECTIFIER [Sirectifier Semiconductors]
ํ™ˆํŽ˜์ด์ง€  http://www.sirectifier.com
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BTA41 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 3 Page - Sirectifier Semiconductors

   
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BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1: Maximum power dis s ipation vers us R MS
on-s tate current (full cycle).
F ig. 2: R MS on-state current vers us cas e
temperature (full cycle).
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
IT (R MS ) (A )
P (W)
180ยฐ
ฮฑ
ฮฑ
0
25
50
75
100
125
0
5
10
15
20
25
30
35
40
45
T c(ยฐ C )
IT (R MS ) (A )
B TA 41
B T B 41
ฮฑ = 180ยฐ
F ig. 3: R elative variation of thermal impedance
versus pulse duration.
F ig.
4:
On-s tate
characteris tics
(maximum
values ).
F ig. 5: S urge peak on-s tate current vers us
number of cycles .
F ig. 6: Non-repetitive s urge peak on-s tate
current for a
s inus oidal puls e with width
tp < 10 ms, and corresponding value of Iยฒt.
1.E -03 1.E -02 1.E -01 1.E +00 1.E +01 1.E +02 1.E +03
1.E -03
1.E -02
1.E -01
1.E +00
K =[Zth/R th]
Zth(j-c)
Zth(j-a)
B TA/B T B 41
tp (s )
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
400
V T M (V )
IT M (A )
T j=25ยฐC
T j max
T j max.:
V to = 0.85 V
R d = 10 m
โ„ฆ
1
10
100
1000
0
50
100
150
200
250
300
350
400
450
Number of cycles
IT S M (A )
Non repetitive
T j initial=25ยฐC
R epetitive
T c=70ยฐC
One cycle
t=20ms
0.01
0.10
1.00
10.00
100
1000
10000
tp (ms )
IT S M (A ), Iยฒ t (A ยฒ s )
T j initial=25ยฐC
IT S M
Iยฒt
dI/dt limitation:
50A /ยตs


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