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MBR1530CT 데이터시트(PDF) 1 Page - Sirectifier Semiconductors |
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MBR1530CT 데이터시트(HTML) 1 Page - Sirectifier Semiconductors |
1 / 2 page MBR1530CT thru MBR1545CT Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=125 C IFSM Maximum Ratings 15 150 A A Unit o IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25 C @TJ=125 C CJ Typical Junction Capacitance Per Element (Note 3) TJ Operating Temperature Range 0.1 15 3.0 400 -55 to +150 -55 to +175 mA pF o o Typical Thermal Resistance (Note 2) ROJC C/W o C o NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. Wide Temperature Range and High Tjm Schottky Barrier Rectifiers MBR1530CT MBR1535CT MBR1540CT MBR1545CT VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) dv/dt Voltage Rate Of Change (Rated VR) 10000 V/us C o TSTG Storage Temperature Range FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any Maximum Forward Voltage (Note 1) IF=7.5A @TJ=125 C IF=15A @TJ=25 C IF=15A @TJ=125 C VF 0.57 0.84 0.72 V o o o A=Anode, C=Cathode, TAB=Cathode A A C C(TAB) A C A Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB |
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