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M74HC03M1R 데이터시트(PDF) 3 Page - STMicroelectronics |
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3 / 8 page M74HC03 3/8 DC SPECIFICATIONS AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate) Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. VIH High Level Input Voltage 2.0 1.5 1.5 1.5 V 4.5 3.15 3.15 3.15 6.0 4.2 4.2 4.2 VIL Low Level Input Voltage 2.0 0.5 0.5 0.5 V 4.5 1.35 1.35 1.35 6.0 1.8 1.8 1.8 VOL Low Level Output Voltage 2.0 IO=20 µA 0.0 0.1 0.1 0.1 V 4.5 IO=20 µA 0.0 0.1 0.1 0.1 6.0 IO=20 µA 0.0 0.1 0.1 0.1 4.5 IO=4.0 mA 0.17 0.26 0.33 0.40 6.0 IO=5.2 mA 0.18 0.26 0.33 0.40 II Input Leakage Current 6.0 VI = VCC or GND ± 0.1 ± 1 ± 1 µA IOZ Output Leakage Current 6.0 VI = VIH or VIL VO = VCC or GND ±0.5 ± 5 ± 10 µA ICC Quiescent Supply Current 6.0 VI = VCC or GND 110 20 µA Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. tTHL Output Transition Time 2.0 30 75 95 110 ns 4.5 8 151922 6.0 7 131619 tPLZ Propagation Delay Time 2.0 RL = 1 KΩ 16 60 75 90 ns 4.5 9 121518 6.0 8 101315 tPZL Propagation Delay Time 2.0 RL = 1 KΩ 23 60 75 90 ns 4.5 7 121518 6.0 6 101315 Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. CIN Input Capacitance 5.0 5 101010 pF CPD Power Dissipation Capacitance (note 1) 5.0 7 pF |
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