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IRFP4468PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP4468PBF
상세설명  HEXFET Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP4468PBF 데이터시트(HTML) 2 Page - International Rectifier

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IRFP4468PbF
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Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.045mH
RG = 25Ω, IAS = 180A, VGS =10V. Part not recommended for use
above this value .
S
D
G
„ ISD ≤ 180A, di/dt ≤ 600A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
… Pulse width ≤ 400μs; duty cycle ≤ 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.09
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.0
2.6
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
0.8
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
310
–––
–––
S
Qg
Total Gate Charge
–––
360
540
nC
Qgs
Gate-to-Source Charge
–––
81
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
89
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
270
–––
td(on)
Turn-On Delay Time
–––
52
–––
ns
tr
Rise Time
–––
230
–––
td(off)
Turn-Off Delay Time
–––
160
–––
tf
Fall Time
–––
260
–––
Ciss
Input Capacitance
––– 19860 –––
pF
Coss
Output Capacitance
–––
1360
–––
Crss
Reverse Transfer Capacitance
–––
540
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1550 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)h –––
900
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 290c
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
1120
A
(Body Diode)
d
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
100
ns
TJ = 25°C
VR = 85V,
–––
110
TJ = 125°C
IF = 180A
Qrr
Reverse Recovery Charge
–––
370
nC TJ = 25°C
di/dt = 100A/μs
g
–––
420
TJ = 125°C
IRRM
Reverse Recovery Current
–––
6.9
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 180A
RG = 2.7Ω
VGS = 10V
g
VDD = 65V
ID = 180A, VDS =0V, VGS = 10V
TJ = 25°C, IS = 180A, VGS = 0V
g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
d
VGS = 10V, ID = 180A
g
VDS = VGS, ID = 250μA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS =50V
Conditions
VGS = 10V
g
VGS = 0V
VDS = 50V
ƒ = 100 kHz, See Fig. 5
VGS = 0V, VDS = 0V to 80V
i, See Fig. 11
VGS = 0V, VDS = 0V to 80V
h
Conditions
VDS = 50V, ID = 180A
ID = 180A
VGS = 20V
VGS = -20V


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