STGF14NC60KD datasheet(5/16 Pages) STMICROELECTRONICS

부품명	STGF14NC60KD

상세설명	14 A - 600 V - short circuit rugged IGBT

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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5 / 16 page

STGB14NC60KD - STGF14NC60KD - STGP14NC60KD

Electrical characteristics

5/16

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 7 A

RG= 10 Ω, VGE= 15 V,

(see Figure 18)

22.5

8.5

700

ns

A/µs

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 7 A

RG= 10 Ω, VGE= 15 V,

TC= 125 °C

(see Figure 18)

22

9.5

680

ns

A/µs

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

Vcc = 390 V, IC = 7 A,

RGE = 10 Ω, VGE = 15 V

(see Figure 18)

60

116

75

ns

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

Vcc = 390 V, IC = 7 A,

RGE = 10 Ω, VGE = 15 V

TC= 125 °C

(see Figure 18)

24

196

144

ns

Table 7.

Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

Eon (1)

Eoff

(2)

Ets

1.

Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package

with a co-pack diode, the co-pack diode is used as external diode. IGBTs and DIODE are at the same

temperature (25°C and 125°C)

2.

Turn-off losses include also the tail of the collector current.

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 390 V, IC = 7 A

RG= 10 Ω, VGE= 15 V,

(see Figure 18)

82

155

237

µJ

Eon (1)

Eoff

(2)

Ets

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 390 V, IC = 7 A

RG= 10 Ω, VGE= 15 V,

TC= 125 °C

(see Figure 18)

131

370

501

µJ

Table 8.

Collector-emitter diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

VF

Forward on-voltage

IF = 7 A

IF = 7 A, TC= 125 °C

1.8

1.3

2.1

V

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 7 A, VR = 40 V,

di/dt = 100 A/µs

(see Figure 21)

37

40

2.1

ns

nC

A

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 7 A, VR = 40 V,

TC= 125 °C,

di/dt = 100 A/µs

(see Figure 21)

61

98

3.2

ns

nC

A

유사한 부품 번호 - STGF14NC60KD

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STGF14NC60KD	456Kb / 14P	N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
	STGF14NC60KD	833Kb / 17P	N-channel 14A - 600V - TO-220 - TO-220FP - D2PAK Short circuit rated PowerMESH TM IGBT
	STGF14NC60KD	543Kb / 16P	14 A, 600 V - short-circuit rugged IGBT

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유사한 설명 - STGF14NC60KD

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STGB14NC60KD	543Kb / 16P	14 A, 600 V - short-circuit rugged IGBT
	STGF14HF60KD	412Kb / 12P	14 A - 600 V - short-circuit rugged IGBT August 2009
	STGF14N60D	425Kb / 11P	14 A - 600 V - short circuit rugged IGBT February 2009 Rev 1
	STGB19NC60KD	586Kb / 17P	20 A - 600 V - short circuit rugged IGBT
	STGB8NC60KD	562Kb / 18P	600 V - 8 A - short circuit rugged IGBT
	STGB30NC60K	385Kb / 15P	30 A - 600 V - short circuit rugged IGBT
	STGB19NC60K	524Kb / 15P	20 A - 600 V - short circuit rugged IGBT
	STGW40NC60KD	846Kb / 13P	600 V, 40 A short-circuit rugged IGBT
	STGP10HF60KD	477Kb / 13P	10 A - 600 V - short-circuit rugged IGBT February 2012
	STGF10NC60KD	1Mb / 30P	10 A, 600 V short-circuit rugged IGBT Rev 7 June 2017

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STGF14NC60KD 데이터시트(PDF) 5 Page - STMicroelectronics

STGF14NC60KD 데이터시트(HTML) 5 Page - STMicroelectronics

유사한 부품 번호 - STGF14NC60KD

유사한 설명 - STGF14NC60KD

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