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TDA7563BPDTR 데이터시트(PDF) 8 Page - STMicroelectronics |
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TDA7563BPDTR 데이터시트(HTML) 8 Page - STMicroelectronics |
8 / 33 page Electrical specifications TDA7563B 8/33 3 Electrical specifications 3.1 Absolute maximum ratings 3.2 Thermal data 3.3 Electrical characteristics Refer to the test circuit, VS = 14.4V; RL = 4Ω; f = 1KHz; GV = 30dB; Tamb = 25°C; unless otherwise specified. Table 2. Absolute maximum ratings Symbol Parameter Value Unit Vop Operating supply voltage 18 V VS DC supply voltage 28 V Vpeak Peak supply voltage (for t = 50ms) 50 V VCK CK pin voltage 6 V VDATA Data pin voltage 6 V IO Output peak current (not repetitive t = 100ms) 8 A IO Output peak current (repetitive f > 10Hz) 6 A Ptot Power dissipation Tcase = 70°C 85 W Tstg, Tj Storage and junction temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter PowerSO Flexiwatt Unit Rth j-case Thermal resistance junction to case Max. 11 °C/W Table 4. Electrical characteristics Symbol Parameter Test condition Min. Typ. Max. Unit Power amplifier VS Supply voltage range 8 18 V Id Total quiescent drain current 170 300 mA PO Output power Max. power (VS = 15.2V, square wave input (2Vrms)) 50 W THD = 10% THD = 1% 25 20 28 22 W W |
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