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IRFP4004PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP4004PBF
상세설명  IRFP4004PBF
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRFP4004PBF 데이터시트(HTML) 2 Page - International Rectifier

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IRFP4004PbF
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Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. Refer to App Notes (AN-1140).
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T
Jmax, starting TJ = 25°C, L = 0.015mH
RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use
above this value.
S
D
G
„ I
SD ≤ 195A, di/dt ≤ 690A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
∆V
(BR)DSS/
∆T
J
Breakdown Voltage Temp. Coefficient
–––
0.035
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.35
1.70
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
290
–––
–––
S
Qg
Total Gate Charge
–––
220
330
nC
Qgs
Gate-to-Source Charge
–––
59
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
75
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
145
–––
RG(int)
Internal Gate Resistance
–––
6.8
–––
td(on)
Turn-On Delay Time
–––
59
–––
ns
tr
Rise Time
–––
370
–––
td(off)
Turn-Off Delay Time
–––
160
–––
tf
Fall Time
–––
190
–––
Ciss
Input Capacitance
–––
8920
–––
pF
Coss
Output Capacitance
–––
2360
–––
Crss
Reverse Transfer Capacitance
–––
930
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
i ––– 2860 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)
h
–––
3110
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
350
c
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
1390
(Body Diode)
di
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
83
130
ns
TJ = 25°C
VR = 20V,
–––
78
120
TJ = 125°C
IF = 195A
Qrr
Reverse Recovery Charge
–––
190
290
nC
TJ = 25°C
di/dt = 100A/µs
g
–––
210
320
TJ = 125°C
IRRM
Reverse Recovery Current
–––
4.0
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 195A
RG = 2.7
VGS = 10V
g
VDD = 20V
ID = 195A, VDS =0V, VGS = 10V
TJ = 25°C, IS = 195A, VGS = 0V
g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
d
VGS = 10V, ID = 195A
g
VDS = VGS, ID = 250µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS = 20V
Conditions
VGS = 10V
g
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
i
VGS = 0V, VDS = 0V to 32V
h
Conditions
VDS = 10V, ID = 195A
ID = 195A
VGS = 20V
VGS = -20V


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