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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SMBYW02-200 데이터시트(HTML) 2 Page - STMicroelectronics |
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SMBYW02-200 데이터시트(HTML) 2 Page - STMicroelectronics |
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Symbol Parameters Test Conditions Min. Typ. Max. Unit VF* Reverse Leakage Current Tj = 25 °CIF =6 A 1.25 V Tj = 100 °CIF =2 A 0.8 0.85 IR ** Forward Voltage Drop Tj =25 °CVR =VRRM 10 µA Tj = 100 °C 0.1 0.3 mA Pulse test : * tp = 380 µs, δ <2 % ** tp = 5 ms, δ <2 % To evaluate the conduction losses use the following equation : P = 0.7 x IF(AV) + 0.075 x IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit trr Tj =25 °CIF =1A dIF/dt = -50A/µsVR = 30V 26 35 ns tfr Tj =25 °CIF =2A dIF/dt = -50A/µs VFR = 1.1 x VF max 30 ns VFP Tj =25 °CIF =2A dIF/dt = -50A/µs5 V RECOVERY CHARACTERISTICS Symbol Parameter Value Unit Rth (j-l) Junction to leads 25 °C/W THERMAL RESISTANCE SMBYW02-200 2/5 |
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