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SMBYW02-200 데이터시트(HTML) 2 Page - STMicroelectronics

부품명 SMBYW02-200
상세내용  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
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제조사  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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SMBYW02-200 데이터시트(HTML) 2 Page - STMicroelectronics

   
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background image
Symbol
Parameters
Test Conditions
Min.
Typ.
Max.
Unit
VF*
Reverse Leakage Current
Tj = 25
°CIF =6 A
1.25
V
Tj = 100
°CIF =2 A
0.8
0.85
IR **
Forward Voltage Drop
Tj =25
°CVR =VRRM
10
µA
Tj = 100
°C
0.1
0.3
mA
Pulse test : * tp = 380
µs, δ <2 %
** tp = 5 ms,
δ <2 %
To evaluate the conduction losses use the following equation :
P = 0.7 x IF(AV) + 0.075 x IF
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
trr
Tj =25
°CIF =1A dIF/dt = -50A/µsVR = 30V
26
35
ns
tfr
Tj =25
°CIF =2A dIF/dt = -50A/µs
VFR = 1.1 x VF max
30
ns
VFP
Tj =25
°CIF =2A dIF/dt = -50A/µs5
V
RECOVERY CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-l)
Junction to leads
25
°C/W
THERMAL RESISTANCE
SMBYW02-200
2/5


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