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STP21NM50N 데이터시트(PDF) 4 Page - STMicroelectronics |
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STP21NM50N 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N 4/18 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Value Unit Min. Typ. Max. V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS = 0 500 V dv/dt(1) 1. Characteristic value at turn off on inductive load Drain source voltage slope VDD=400V, ID=25A, VGS=10V 44 V/ns IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating,TC@125°C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V RDS(on Static drain-source on resistance VGS = 10V, ID = 9A 0.150 0.190 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS = 15V, ID = 9A 12 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 1950 420 60 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0V, VDS = 0V to 400V 270 pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD =250V, ID = 9A RG =4.7Ω VGS = 10V (see Figure 15.) 22 18 90 30 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400V, ID = 18A, VGS = 10V, (see Figure 16.) 65 10 30 nC nC nC Rg Gate input resistance f=1MHz Gate DC Bias=0 test signal level=20mV open drain 1.6 Ω |
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유사한 설명 - STP21NM50N_07 |
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