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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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1N4448WS 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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1N4448WS 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N4148WS / 1N4448WS / 1N914BWS Rev. 1.0 1 March 2008 1N4148WS / 1N4448WS / 1N914BWS Small Signal Diodes • General Purpose Diodes • Fast switching Device( TRR < 4.0 ns ) • Very Small and Thin SMD package • Moisture Level Sensitivity 1 • Pb-free Version and RoHS Compliant • Matte Tin (Sn) Lead Finish • Green Mold Compound Absolute Maximum Ratings* T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics * Device mounted on FR-4 PCB minimum land pad. Electrical Characteristics T a=25°C unless otherwise noted Symbol Parameter Value Units VRSM Non-Repetitive Peak Reverse Voltage 100 V VRRM Repetitive Peak Reverse Voltage 75 V I FRM Repetitive Peak Forward Current 300 mA IO Continuous Forward Current 150 mA TJ Operating Junction Temperature Range +150 °C TSTG Storage Temperature Range -55 to +150 °C Symbol Parameter Value Unit RθJA Thermal Resistance, Junction to Ambient 500 °C/W PD Power Dissipation(TC=25°C) 200 mW Symbol Parameter Test Conditions Min Typ Max Units BVR Breakdown Voltage IR = 100 μA IR = 5 μA 100 75 V IR Reverse Current VR = 20 V VR = 75 V 25 5 nA μA VF Forward Voltage 1N4448WS/ 914BWS 1N4148WS 1N4448WS/ 914BWS IF = 5 mA IF = 10 mA IF = 100 mA 0.62 0.72 1 1 V C O Diode Capacitance VR = 0, f = 1 MHz 4 pF TRR Reverse Recovery Time I F = 10 mA, IR = 60mA I RR = 1 mA, RL = 100 Ω 4 nS SOD-323F *Band Denotes Cathode Device Marking Code Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 |
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