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IRFP4368PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP4368PBF
상세설명  HEXFET Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP4368PBF 데이터시트(HTML) 2 Page - International Rectifier

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IRFP4368PbF
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Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. Refer to App Notes (AN-1140).
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T
Jmax, starting TJ = 25°C, L = 0.022mH
RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use
above this value.
S
D
G
„ I
SD ≤ 195A, di/dt ≤ 1740A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
V
∆V
(BR)DSS/
∆T
J
Breakdown Voltage Temp. Coefficient
–––
0.077
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.46
1.85
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
650
–––
–––
S
Qg
Total Gate Charge
–––
380
570
nC
Qgs
Gate-to-Source Charge
–––
79
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
105
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
275
–––
RG(int)
Internal Gate Resistance
–––
0.80
–––
td(on)
Turn-On Delay Time
–––
43
–––
ns
tr
Rise Time
–––
220
–––
td(off)
Turn-Off Delay Time
–––
170
–––
tf
Fall Time
–––
260
–––
Ciss
Input Capacitance
––– 19230 –––
pF
Coss
Output Capacitance
–––
1670
–––
Crss
Reverse Transfer Capacitance
–––
770
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
i ––– 1700 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)
h
–––
1410
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
350
c
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
1280
(Body Diode)
di
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
130
200
ns
TJ = 25°C
VR = 64V,
–––
140
210
TJ = 125°C
IF = 195A
Qrr
Reverse Recovery Charge
–––
450
680
nC
TJ = 25°C
di/dt = 100A/µs
g
–––
530
800
TJ = 125°C
IRRM
Reverse Recovery Current
–––
9.1
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 195A
RG = 2.7
VGS = 10V
g
VDD = 49V
ID = 195A, VDS =0V, VGS = 10V
TJ = 25°C, IS = 195A, VGS = 0V
g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
d
VGS = 10V, ID = 195A
g
VDS = VGS, ID = 250µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS = 38V
Conditions
VGS = 10V
g
VGS = 0V
VDS = 50V
ƒ = 100kHz
VGS = 0V, VDS = 0V to 60V
i
VGS = 0V, VDS = 0V to 60V
h
Conditions
VDS = 50V, ID = 195A
ID = 195A
VGS = 20V
VGS = -20V


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