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ST2009DHI 데이터시트(PDF) 2 Page - STMicroelectronics |
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ST2009DHI 데이터시트(HTML) 2 Page - STMicroelectronics |
2 / 6 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.3 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 1500 V VCE = 1500 V TC = 125 oC 1 2 mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 4 V 70 210 mA VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 5 A IB = 1.25 A 1.5 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 5 A IB = 1.25 A 1.2 V hFE ∗ DC Current Gain IC = 1 A VCE = 5 V IC = 5 A VCE = 1 V IC = 5.5 A VCE = 5 V 5 20 5 9 VF Diode Forward Voltage IF = 5 A 1.5 2 V ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 5 A IBon(END) = 1 A LBB(off) = 2 µH VBE(off) = -2.5 V f = 32 KHz 2.6 0.28 3.2 0.55 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance ST2009DHI 2/6 |
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