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FEATURES
DESCRIPTION
APPLICATIONS
• Low noise
• Red enhanced
• High shunt resistance
• High response
SYMBOL
PARAMETER
MIN
MAX
UNITS
VBR
Reverse Voltage
75
V
TSTG
Storage Temperature
-55
+150
°C
TO
Operating Temperature
-40
+125
°C
TS
Soldering Temperature*
+240
°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ID
Dark Current
VR = 5V
0.5
2.0
nA
RSH
Shunt Resistance
VR = 10 mV
800
MW
VR = 0V, f = 1 MHz
28
CJ
Junction Capacitance
VR = 10V, f = 1 MHz
6
pF
lrange
Spectral Application Range
Spot Scan
350
1100
nm
l= 633nm, VR = 0 V
0.32
0.36
R
Responsivity
l= 900nm, VR = 0 V
0.50
0.55
A/W
VBR
Breakdown Voltage
I = 10 μA
50
V
NEP
Noise Equivalent Power
VR = 5V @ l=950nm
2.8X10
-14
W/ √ Hz
RL = 50 Ω,VR = 0 V
190
tr
Response Time**
RL = 50 Ω,VR = 10 V
13
nS
SPECTRAL RESPONSE
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
Wavelength (nm)
Red Enhanced Silicon Photodiode
SD 057-11-21-011
PACKAGE DIMENSIONS INCH [mm]
TO-46 PACKAGE
The SD 057-11-21-011 is a general purpose silicon
PIN photodiode, red enhanced, packaged in a leaded
hermetic TO-46 metal package.
• Instrumentation
• Industrial
• Medical
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
CHIP DIMENSIONS INCH [mm]
.060 [1.52]
SQUARE
PACKAGE DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
.051 [1.30] SQUARE
ACTIVE AREA
.100 [2.54]
2X Ø.018 [0.46]
ANODE
CATHODE
.057 [1.44]
Ø .215 [5.46]
Ø .210 [5.33]
VIEWING
2X .500 [12.7] MIN
TO-46 PACKAGE
45°
51°
.145 [3.68]
.160 [4.06]
Ø .152 [3.86]
ANGLE
Ø .156 [3.96]
Ø.181 [4.60]
Ø.187 [4.75]