STB100NH02L datasheet(4/13 Pages) STMICROELECTRONICS

부품명	STB100NH02L

상세설명	N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET

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4 / 13 page

Electrical characteristics

STB100NH02L

4/13

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 25mA, VGS =0

24

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 20V

VDS = 20V, TC = 125°C

1

10

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

1

1.8

V

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 30A

VGS = 5V, ID = 15A

0.0052

0.007

0.006

0.011

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward

transconductance

VDS = 10V , ID =30A

40

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 15V, f = 1MHz,

VGS = 0

2850

800

120

pF

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 10V, ID = 30A

RG =4.7Ω VGS = 10V

(see Figure 13)

13

75

50

18

ns

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 10V, ID = 30A,

VGS = 10V, RG =4.7Ω

(see Figure 14)

47.5

10

7

64

nC

RG

Gate input resistance

f=1 MHz gate DC

Bias=0

test signal level =20 mV

open drain

1

Ω

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