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STB4NB80 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 STB4NB80
상세설명  N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB4NB80 데이터시트(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
TO-263
TO-262
Rthj-case
Thermal Resistance Junction-case
Max
1
3.6
oC/W
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
4A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, ID = IAR, VDD = 50 V)
230
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µA
VGS = 0
800
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating
Tc = 125
oC
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
VDS = VGS
ID = 250
µA
34
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V
ID = 2 A
3
3.3
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
4A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID = 2 A
1.8
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0
700
95
9
920
126
12
pF
pF
pF
STB4NB80
2/6


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