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STB55NE06L 데이터시트(PDF) 3 Page - STMicroelectronics |
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STB55NE06L 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 5 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 30 V ID = 27.5 A RG =4.7 Ω VGS = 5 V 40 100 55 140 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 48 V ID = 55 A VGS = 5 V 40 13 20 55 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 48 V ID = 55 A RG =4.7 Ω VGS = 5 V 25 40 65 35 55 90 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM( •) Source-drain Current Source-drain Current (pulsed) 55 220 A A VSD ( ∗) Forward On Voltage ISD = 55 A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 55 A di/dt = 100 A/ µs VDD = 30 V Tj = 150 oC 65 180 5.5 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STB55NE06L 3/5 |
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