전자부품 데이터시트 검색엔진 |
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STB9NB50 데이터시트(PDF) 3 Page - STMicroelectronics |
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STB9NB50 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 8 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it td(on) tr Turn-on Time Rise Time VDD =250 V ID =4.3 A RG =4.7 Ω VGS =10 V (see test circuit, figure 3) 19 11 30 15 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =400 V ID =8.6 A VGS =10 V 32 10. 6 13. 7 45 nC nC nC SWITCHING OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =400 V ID =8.6 A RG =4.7 Ω VGS =10 V (see test circuit, figure 5) 11. 5 11 20 17 16 28 ns ns ns SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 8.6 34.4 A A VSD ( ∗) Forward On Voltage ISD =8. 6 A VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8.6 A di/dt = 100 A/ µs VR =100 V Tj =150 o C (see test circuit, figure 5) 420 3.5 16. 5 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STB9NB50 3/8 |
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